Yu HE

Yu HE

Yu He currently works at the School of Integrated Circuit Science and Engineering, pursuing his PhD degree at Beihang University (BUAA).

Publications

Spin-Related Superconducting Devices for Logic and Memory Applications

Published in ADVANCED DEVICES & INSTRUMENTATION, 2023

Recently, there has been a surge of research in the field of superconducting spintronics, which combines superconductivity and magnetism. This emerging field is considered an alternative or complementary approach to traditional complementary metal-oxide semiconductor (CMOS) technology, offering high efficiency and effectiveness. Furthermore, the unique physical phenomena resulting from the interplay of these two competing properties have attracted increasing attention for their potential application in low-power quantum computing. In this review, we focus on the latest advancements in spin-related superconducting logic devices, specifically categorized as superconducting diodes based on their semiconductor counterparts. Additionally, given the ultralow operating temperatures required for these devices, we provide a comprehensive overview of compatible cryogenic memory technologies that incorporate spin-related principles. Finally, we address the key challenges currently hindering the practical implementation of spin-related superconducting electronics and offer insights and directions for future research in this field.

Recommended citation: Yu He, et al. Spin-Related Superconducting Devices for Logic and Memory Applications. Adv Devices Instrum. 2023; 4:0035. https://spj.science.org/doi/10.34133/adi.0035

First-principles prediction of the half-metallicity in quaternary Heusler CoRhCrAl thin films

Published in Physica Scripta, 2022

Magnetic thin films are essential building blocks for spintronic devices. Whether the spin-dependent properties associated with a parental bulk can be preserved at the surface or interface with a lowered symmetry represents an important topic to be addressed. In the work, theoretical calculations are performed to study the structural, electronic and magnetic properties of the bulk CoRhCrAl quaternary Heusler alloy and its (111)-, (001)- and (110)-oriented thin films by using the VASP package based on the first-principles density functional theory. Our results indicate that the bulk structure of CoRhCrAl alloy is half-metallic (HM) in character with 100% spin-polarization, and its spin-down bandgap and total magnetic moment are ${E}_{g}^{\downarrow }=0.30$ eV and 3.00 μB, respectively. For the thin film structures with different orientations and terminations, half-metallicity only exists in the (111)-oriented thin film with Al-termination, but is lost in the Co-, Rh- or Cr-terminations. On the other hand, both the (001)- and (110)-oriented thin films are partially or nearly HM. Interestingly, the half-metallicity is lost on introducing U parameter in the calculations.

Recommended citation: Iltaf Muhammad et al 2022 Phys. Scr. 97 075812 https://iopscience.iop.org/article/10.1088/1402-4896/ac7679